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Freescale Semiconductor Technical Data
Document Number: MRF6VP21KH Rev. 4, 4/2010
RF Power Field Effect Transistor
N--Channel Enhancement--Mode Lateral MOSFET
Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. * Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 sec, Duty Cycle = 20% Power Gain -- 24 dB Drain Efficiency -- 67.5% * Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power Features * Characterized with Series Equivalent Large--Signal Impedance Parameters * CW Operation Capability with Adequate Cooling * Qualified Up to a Maximum of 50 VDD Operation * Integrated ESD Protection * Designed for Push--Pull Operation * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * RoHS Compliant * In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
MRF6VP21KHR6
10-235 MHz, 1000 W, 50 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET
CASE 375D-05, STYLE 1 NI-1230 PART IS PUSH-PULL
RFinA/VGSA 3
1 RFoutA/VDSA
RFinB/VGSB 4
2 RFoutB/VDSB
(Top View)
Figure 1. Pin Connections Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature (1,2) Symbol VDSS VGS Tstg TC TJ Value --0.5, +110 --6, +10 -- 65 to +150 150 225 Unit Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 1000 W Pulsed, 100 sec Pulse Width, 20% Duty Cycle Symbol ZJC Value (2,3) 0.03 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2008, 2010. All rights reserved.
MRF6VP21KHR6 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics
(1)
Symbol IGSS V(BR)DSS IDSS IDSS
Min -- 110 -- --
Typ -- -- -- --
Max 20 -- 100 5
Unit
Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) Drain--Source Breakdown Voltage (ID = 300 mA, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 50 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 100 Vdc, VGS = 0 Vdc) On Characteristics Gate Threshold Voltage (1) (VDS = 10 Vdc, ID = 1600 Adc) Gate Quiescent Voltage (2) (VDD = 50 Vdc, ID = 150 mAdc, Measured in Functional Test) Drain--Source On--Voltage (1) (VGS = 10 Vdc, ID = 4 Adc) Dynamic Characteristics (1) Reverse Transfer Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 50 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance (VDS = 50 Vdc, VGS = 0 Vdc 30 mV(rms)ac @ 1 MHz)
Adc Vdc Adc mA
VGS(th) VGS(Q) VDS(on)
1 1.5 --
1.68 2.2 0.28
3 3.5 --
Vdc Vdc Vdc
Crss Coss Ciss
-- -- --
3.3 147 506
-- -- --
pF pF pF
Functional Tests (2) (In Freescale Test Fixture, 50 ohm system) VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak (200 W Avg.), f = 225 MHz, 100 sec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push--pull configuration. Gps D IRL 22 65 -- 24 67.5 --15 26 -- --9 dB % dB
MRF6VP21KHR6 2 RF Device Data Freescale Semiconductor
VBIAS + C1 + C2 +
B1
L1
R1
R2 L4 + C15 +
VSUPPLY + C20
C3
C4
C5
C6
C7
C8
C9
C10
C11 C21 Z14
C13
C14
C16 C17 C18 C19
Z10 Z12 Z4 RF INPUT Z1 Z2 L2 Z3 J1 C12 T1 Z5 Z7 Z6 Z8
Z16 RF OUTPUT
L3 Z9
DUT Z11 Z13
Z18 C23 Z15 C24 Z17 T2 C22 J2
Z19
C25
Z1 Z2* Z3* Z4, Z5 Z6, Z7 Z8, Z9 Z10, Z11
0.100 x 0.082 Microstrip 1.557 x 0.082 Microstrip 0.055 x 0.082 Microstrip 0.133 x 0.193 Microstrip 0.143 x 0.518 Microstrip 0.357 x 0.518 Microstrip 0.200 x 0.518 Microstrip
Z12, Z13 Z14, Z15 Z16*, Z17* Z18 Z19 PCB
0.599 x 0.253 Microstrip 0.110 x 0.253 Microstrip 0.055 x 0.253 Microstrip 0.069 x 0.082 Microstrip 1.050 x 0.082 Microstrip Arlon CuClad 250GX--0300--55--22, 0.030, r = 2.55
*Line length includes microstrip bends.
Figure 2. MRF6VP21KHR6 Test Circuit Schematic
Table 5. MRF6VP21KHR6 Test Circuit Component Designations and Values
Part B1 C1 C2 C3 C4, C9, C17 C5, C16 C6, C15 C7 C8 C10, C11, C13, C14 C12, C21, C22 C18, C19, C20 C23, C24 C25 J1, J2 L1 L2 L3 L4* R1 R2 T1 T2 *L4 is wrapped around R2. Description 95 , 100 MHz Long Ferrite Bead 47 F, 50 V Electrolytic Capacitor 22 F, 35 V Tantalum Capacitor 10 F, 35 V Tantalum Capacitor 10K pF Chip Capacitors 20K pF Chip Capacitors 0.1 F, 50 V Chip Capacitors 2.2 F, 50 V Chip Capacitor 0.22 F, 100 V Chip Capacitor 1000 pF Chip Capacitors 27 pF Chip Capacitors 470 F, 63 V Electrolytic Capacitors 68 pF Chip Capacitors 4.7 pF Chip Capacitor Jumpers from PCB to T1 and T2 82 nH Inductor 8 nH Inductor 1 Turn Inductor, Red Coil 10 Turn, #18 AWG Inductor, Hand Wound 1 K, 1/4 W Axial Leaded Resistor 20 , 3 W Chip Resistor Balun Balun Part Number 2743021447 476KXM050M T491X226K035AT T491D106K035AT ATC200B103KT50XT ATC200B203KT50XT CDR33BX104AKYS C1825C225J5RAC C1825C223K1GAC ATC100B102JT50XT ATC100B270JT500XT EKME630ELL471MK25S ATC100B680JT500XT ATC100B4R7JT500XT Copper Foil 1812SMS--82NJC A03TKLC GA3092--AL Copper Wire CMF601000R0FKEK CPF320R000FKE14 TUI--9 TUO--4 Vishay Vishay Comm Concepts Comm Concepts CoilCraft CoilCraft CoilCraft Manufacturer Fair--Rite Illinois Cap Kemet Kemet ATC ATC Kemet Kemet Kemet ATC ATC Multicomp ATC ATC
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 3
C1 C4 C5 C6 C17 C16 C15
C19
B1 C2 C3 C7 C8 C9 C11 J1 L2 C12 R1 L1
C18
C20 C14 C21 C10 T1 C23 C24 L3 CUT OUT AREA J2 L4, R2* C13 T2
C22
C25
MRF6VP21KH Rev. 1
* L4 is wrapped around R2.
Figure 3. MRF6VP21KHR6 Test Circuit Component Layout
MRF6VP21KHR6 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
1000 Ciss Coss 100 Measured with 30 mV(rms)ac @ 1 MHz VGS = 0 Vdc ID, DRAIN CURRENT (AMPS) 100
C, CAPACITANCE (pF)
TJ = 200C TJ = 150C TJ = 175C
10
10
Crss
1 0 10 20 30 40 50 VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
1 1
TC = 25C 10 VDS, DRAIN--SOURCE VOLTAGE (VOLTS) 100
Note: Each side of device measured separately. Figure 4. Capacitance versus Drain-Source Voltage
26 80 70 D, DRAIN EFFICIENCY (%) Pout, OUTPUT POWER (dBm) 60 50 40 30 D 20 10 2000 65 64 63 62 61 60 59 58 57 56 55 30
Note: Each side of device measured separately. Figure 5. DC Safe Operating Area
VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz 25 Pulse Width = 100 sec, Duty Cycle = 20% Gps
P3dB = 61.33 dBm (1358.31 W) P1dB = 60.37 dBm (1088.93 W)
Ideal
Gps, POWER GAIN (dB)
24 23 22 21 20 19 10
Actual
VDD = 50 Vdc, IDQ = 150 mA, f = 225 MHz Pulse Width = 100 sec, Duty Cycle = 20% 31 32 33 34 35 36 37 38 39 40
100 Pout, OUTPUT POWER (WATTS) PULSED
1000
Pin, INPUT POWER (dBm) PULSED
Figure 6. Pulsed Power Gain and Drain Efficiency versus Output Power
28 IDQ = 6000 mA 26 Gps, POWER GAIN (dB) 24 22 20 18 10 3600 mA 1500 mA 750 mA 375 mA 150 mA Gps, POWER GAIN (dB) 24 28
Figure 7. Pulsed Output Power versus Input Power
20 VDD = 30 V 16 35 V 40 V 45 V 50 V
VDD = 50 Vdc, f = 225 MHz Pulse Width = 100 sec, Duty Cycle = 20% 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 2000 12 0 200 400 600 800
IDQ = 150 mA, f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 1000 1200 1400 1600
Pout, OUTPUT POWER (WATTS) PULSED
Figure 8. Pulsed Power Gain versus Output Power
Figure 9. Pulsed Power Gain versus Output Power
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
65 TC = --30_C Pout, OUTPUT POWER (dBm) 60 25_C 55 50 45 40 20 Gps, POWER GAIN (dB) 85_C VDD = 50 Vdc 25 IDQ = 150 mA f = 225 MHz 24 Pulse Width = 100 sec Duty Cycle = 20% 23 22 21 20 19 45 18 10 100 Pout, OUTPUT POWER (WATTS) PULSED 1000 Gps D 26 90 TC = --30_C 80 70 60 50 40 30 20 10 2000 D, DRAIN EFFICIENCY (%)
85_C 25_C
VDD = 50 Vdc IDQ = 150 mA f = 225 MHz Pulse Width = 100 sec Duty Cycle = 20% 25 30 35 40
Pin, INPUT POWER (dBm) PULSED
Figure 10. Pulsed Output Power versus Input Power
0.2 0.18 ZJC, THERMAL IMPEDANCE (C/W) 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0.00001 0.0001 0.001 0.01 D = 0.1 PD t1 t2 D = 0.5 MTTF (HOURS) 10 D = 0.7
Figure 11. Pulsed Power Gain and Drain Efficiency versus Output Power
109
108
107
D = Duty Factor = t1/t2 t1 = Pulse Width t2 = Pulse Period TJ = PD * ZJC + TC
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 50 Vdc, Pout = 1000 W Peak, Pulse Width = 100 sec, Duty Cycle = 20%, and D = 67.5%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product.
0.1
1
RECTANGULAR PULSE WIDTH (S)
Figure 12. Maximum Transient Thermal Impedance
Figure 13. MTTF versus Junction Temperature
MRF6VP21KHR6 6 RF Device Data Freescale Semiconductor
f = 225 MHz
Zsource
Zo = 5
f = 225 MHz Zload
VDD = 50 Vdc, IDQ = 150 mA, Pout = 1000 W Peak f MHz 225 Zsource 1.16 + j4.06 Zload 2.86 + j1.10
Zsource = Test circuit impedance as measured from gate to gate, balanced configuration. Zload = Test circuit impedance as measured from drain to drain, balanced configuration.
Input Matching Network
+
Device Under Test
--
Output Matching Network
-Z source Z
+ load
Figure 14. Series Equivalent Source and Load Impedance
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 7
PACKAGE DIMENSIONS
MRF6VP21KHR6 8 RF Device Data Freescale Semiconductor
MRF6VP21KHR6 RF Device Data Freescale Semiconductor 9
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 1 Date Jan. 2008 Apr. 2008 * Initial Release of Data Sheet * Corrected description and part number for the R1 resistor and updated R2 resistor to latest RoHS compliant part number in Table 5, Test Circuit Component Designations and Values, and updated the footnote to read "L4" versus "L3", p. 3. * Added Fig. 12, Maximum Transient Thermal Impedance, p. 6 2 Sept. 2008 * Added Note to Fig. 4, Capacitance versus Drain--Source Voltage, to denote that each side of device is measured separately, p. 5 * Updated Fig. 5, DC Safe Operating Area, to clarify that measurement is on a per--side basis, p. 5 * Corrected Fig. 13, MTTF versus Junction Temperature, to reflect the correct die size and increased the MTTF factor accordingly, p. 6 3 Dec. 2008 * Fig. 14, Series Equivalent Source and Load Impedance, corrected Zsource copy to read "Test circuit impedance as measured from gate to gate, balanced configuration" and Zload copy to read "Test circuit impedance as measured from drain to drain, balanced configuration"; replaced impedance diagram to show push--pull test conditions, p. 7 * Operating Junction Temperature increased from 200C to 225C in Maximum Ratings table and related "Continuous use at maximum temperature will affect MTTF" footnote added, p. 1 * Reporting of pulsed thermal data now shown using the ZJC symbol, p. 1 * Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software, p. 10 Description
4
Apr. 2010
MRF6VP21KHR6 10 RF Device Data Freescale Semiconductor
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MRF6VP21KHR6
Document Number: RF Device Data MRF6VP21KH Rev. 4, 4/2010 Freescale Semiconductor
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